US 12,178,147 B2
Semiconductor device and method for manufacturing the same
Hai-Dang Trinh, Hsinchu (TW); Fa-Shen Jiang, Taoyuan (TW); Hsing-Lien Lin, Hsin-Chu (TW); and Chii-Ming Wu, Taipei (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD., Hsinchu (TW)
Filed by TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD., Hsinchu (TW)
Filed on Oct. 16, 2022, as Appl. No. 18/046,924.
Application 18/046,924 is a division of application No. 16/657,797, filed on Oct. 18, 2019, granted, now 11,476,416.
Application 16/657,797 is a continuation in part of application No. 15/939,864, filed on Mar. 29, 2018, granted, now 11,437,573, issued on Sep. 6, 2022.
Prior Publication US 2023/0062897 A1, Mar. 2, 2023
Int. Cl. H10N 70/00 (2023.01)
CPC H10N 70/8413 (2023.02) [H10N 70/011 (2023.02); H10N 70/861 (2023.02); H10N 70/883 (2023.02)] 20 Claims
OG exemplary drawing
 
1. A semiconductor device, comprising:
a diffusion barrier structure, wherein the diffusion barrier structure comprises a multiple-layer structure, and the diffusion barrier structure comprises a tantalum (Ta) layer;
a bottom electrode, over the diffusion barrier structure, wherein the Ta layer of the diffusion barrier structure abuts the bottom electrode;
a top electrode, over the bottom electrode;
a switching layer, between the bottom electrode and the top electrode, and configured to store data; and
a capping layer, between the switching layer and the top electrode, wherein a thermal conductivity of the diffusion barrier structure is greater than approximately 20 watts per meter kelvin (W/mK).