US 12,178,059 B2
Detection device
Takashi Nakamura, Tokyo (JP); Makoto Uchida, Tokyo (JP); Masahiro Tada, Tokyo (JP); Marina Mochizuki, Tokyo (JP); Hirofumi Kato, Tokyo (JP); Akio Takimoto, Tokyo (JP); Takao Someya, Tokyo (JP); and Tomoyuki Yokota, Tokyo (JP)
Assigned to Japan Display Inc., Tokyo (JP); and The University of Tokyo, Tokyo (JP)
Filed by Japan Display Inc., Tokyo (JP); and The University of Tokyo, Tokyo (JP)
Filed on Oct. 13, 2021, as Appl. No. 17/500,329.
Application 17/500,329 is a continuation of application No. PCT/JP2020/016504, filed on Apr. 15, 2020.
Claims priority of application No. 2019-078926 (JP), filed on Apr. 17, 2019.
Prior Publication US 2022/0037410 A1, Feb. 3, 2022
Int. Cl. H01L 29/78 (2006.01); H01L 29/786 (2006.01); H10K 39/32 (2023.01); A61B 5/021 (2006.01); G06V 40/13 (2022.01)
CPC H10K 39/32 (2023.02) [H01L 29/78645 (2013.01); A61B 5/02108 (2013.01); G06V 40/1306 (2022.01); G06V 40/1318 (2022.01)] 2 Claims
OG exemplary drawing
 
1. A detection device comprising:
a photodiode; and
a thin-film transistor coupled to the photodiode,
wherein the thin-film transistor comprises:
a semiconductor layer between a light-blocking layer and the photodiode; and
an electrode layer between the semiconductor layer and the photodiode, the electrode layer includes a source electrode and a drain electrode of the thin-film transistor,
wherein the source electrode extends to a position facing the light-blocking layer with the semiconductor layer interposed therebetween,
wherein the source electrode covers an area where the semiconductor layer and a gate electrode overlap with each other in a plan view and a channel region of the semiconductor layer formed by the overlapping, the gate electrode being formed between the source electrode and the semiconductor layer,
wherein the light-blocking layer extends closer to the drain electrode than an end of the source electrode on a drain electrode side extends, and
wherein the thin-film transistor comprises two of the gate electrodes.