US 12,178,051 B2
Magnetic random access memory and manufacturing method thereof
Hui-Hsien Wei, Hsinchu (TW); Chung-Te Lin, Hsinchu (TW); Han-Ting Tsai, Hsinchu (TW); Tai-Yen Peng, Hsinchu (TW); Yu-Teng Dai, Hsinchu (TW); Chien-Min Lee, Hsinchu (TW); Sheng-Chih Lai, Hsinchu (TW); and Wei-Chih Wen, Hsinchu (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed by TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed on Jul. 31, 2023, as Appl. No. 18/228,210.
Application 17/537,119 is a division of application No. 15/966,639, filed on Apr. 30, 2018, granted, now 11,189,658, issued on Nov. 30, 2021.
Application 18/228,210 is a continuation of application No. 17/537,119, filed on Nov. 29, 2021, granted, now 11,805,658.
Claims priority of provisional application 62/590,136, filed on Nov. 22, 2017.
Prior Publication US 2023/0380182 A1, Nov. 23, 2023
Int. Cl. H10B 61/00 (2023.01); B82Y 25/00 (2011.01); G11C 11/16 (2006.01); H01F 41/30 (2006.01); H10N 50/01 (2023.01); H10N 50/10 (2023.01); H10N 50/80 (2023.01); H10N 50/85 (2023.01)
CPC H10B 61/00 (2023.02) [G11C 11/161 (2013.01); H01F 41/307 (2013.01); H10N 50/01 (2023.02); H10N 50/10 (2023.02); H10N 50/80 (2023.02); H10N 50/85 (2023.02); B82Y 25/00 (2013.01); H10B 61/22 (2023.02)] 20 Claims
OG exemplary drawing
 
1. A semiconductor device including a magnetic random access memory (MRAM) cell, comprising:
an MRAM cell structure disposed over a substrate, the MRAM cell structure including a bottom electrode, a magnetic tunnel junction (MTJ) stack and a top electrode;
a first insulating layer disposed over the MRAM cell structure;
a first interlayer dielectric (ILD) layer disposed over the first insulating layer;
a second ILD layer disposed over the first ILD layer; and
a conductive contact in contact with the top electrode,
wherein a side face of the conductive contact includes a lateral protrusion,
wherein the second ILD layer includes a first dielectric layer, a second dielectric layer on the first dielectric layer and a third dielectric layer on the second dielectric layer, and
wherein the lateral protrusion protrudes into the first dielectric layer.