US 12,178,050 B2
Three-dimensional semiconductor memory devices and methods of manufacturing the same
Meng-Han Lin, Hsinchu (TW); and Chia-En Huang, Xinfeng Township (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed on Jan. 26, 2022, as Appl. No. 17/584,797.
Claims priority of provisional application 63/220,202, filed on Jul. 9, 2021.
Prior Publication US 2023/0011604 A1, Jan. 12, 2023
Int. Cl. H10B 53/30 (2023.01); H10B 43/20 (2023.01); H10B 43/30 (2023.01); H10B 51/20 (2023.01); H10B 51/30 (2023.01); H10B 53/20 (2023.01)
CPC H10B 53/30 (2023.02) [H10B 43/20 (2023.02); H10B 43/30 (2023.02); H10B 51/20 (2023.02); H10B 51/30 (2023.02); H10B 53/20 (2023.02)] 20 Claims
OG exemplary drawing
 
1. A semiconductor device, comprising:
a first memory cell comprising:
a first conductor structure extending along a first lateral direction;
a first portion of a first memory film wrapping around a first portion of the first conductor structure;
a first semiconductor film wrapping around the first portion of the first memory film;
a second conductor structure extending along a vertical direction and directly contacting a first sidewall of the first semiconductor film, wherein the first sidewall of the first semiconductor film faces toward or away from a second lateral direction perpendicular to the first lateral direction; and
a third conductor structure extending along the vertical direction and directly contacting a second sidewall of the first semiconductor film, wherein the second sidewall of the first semiconductor film faces toward or away from the second lateral direction.