US 12,178,042 B2
Semiconductor device and a method of manufacturing a semiconductor device
Nam Jae Lee, Cheongju-si (KR)
Assigned to SK hynix Inc., Icheon-si (KR)
Filed by SK hynix Inc., Icheon-si (KR)
Filed on Dec. 19, 2023, as Appl. No. 18/545,082.
Application 18/545,082 is a continuation of application No. 17/172,931, filed on Feb. 10, 2021, granted, now 11,889,672.
Application 17/172,931 is a continuation of application No. 16/678,713, filed on Nov. 8, 2019, granted, now 10,950,613, issued on Mar. 16, 2021.
Claims priority of application No. 10-2019-0082271 (KR), filed on Jul. 8, 2019.
Prior Publication US 2024/0121953 A1, Apr. 11, 2024
Int. Cl. H10B 41/27 (2023.01); H01L 21/225 (2006.01); H01L 21/324 (2006.01); H10B 43/27 (2023.01); H10B 63/00 (2023.01); H10B 43/20 (2023.01)
CPC H10B 41/27 (2023.02) [H01L 21/2251 (2013.01); H01L 21/324 (2013.01); H10B 43/27 (2023.02); H10B 63/845 (2023.02); H10B 43/20 (2023.02)] 1 Claim
OG exemplary drawing
 
1. A semiconductor device comprising:
a first source layer;
a second source layer comprising a first portion disposed on the first source layer and a second portion protruding into the first source layer;
a stack disposed on the second source layer and including conductive layers and insulating layers alternating with each other;
a channel layer passing through the stack and the first portion of the second source layer; and
a source contact structure passing through the stack and contacting the second portion of the second source layer.