| CPC H02M 3/156 (2013.01) [H01L 27/1225 (2013.01); H01L 29/7869 (2013.01); H01L 29/78696 (2013.01); H02H 7/18 (2013.01)] | 17 Claims |
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1. A semiconductor device comprising:
a first transistor;
an oscillator;
a first wiring;
a second wiring; and
a first circuit,
wherein the oscillator is electrically connected to each of the first wiring, the second wiring, and the first circuit,
wherein the first transistor comprises a metal oxide containing indium or zinc in a channel formation region,
wherein the oscillator comprises a second transistor, a third transistor, a fourth transistor, a fifth transistor, and a first capacitor,
wherein a gate of the second transistor and a gate of the third transistor are electrically connected to one of a source and a drain of the first transistor,
wherein one of a source and a drain of the second transistor is electrically connected to one of a source and a drain of the fourth transistor and one of electrodes of the first capacitor,
wherein one of a source and a drain of the third transistor is electrically connected to one of a source and a drain of the fifth transistor and the other electrode of the first capacitor,
wherein the other of the source and the drain of the fourth transistor is electrically connected to a gate of the fifth transistor,
wherein the other of the source and the drain of the fifth transistor is electrically connected to the first circuit and a gate of the fourth transistor, and
wherein the first wiring is electrically connected to the other of the source and the drain of the second transistor and the other of the source and the drain of the third transistor.
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