US 12,176,683 B2
Laser element
Akinori Noguchi, Fukuyama (JP); Yoshihiko Tani, Fukuyama (JP); and Hiroshi Nakatsu, Fukuyama (JP)
Assigned to Sharp Fukuyama Laser Co., Ltd., Fukuyama (JP)
Filed by Sharp Fukuyama Laser Co., Ltd., Fukuyama (JP)
Filed on Nov. 16, 2021, as Appl. No. 17/527,616.
Claims priority of application No. 2020-191712 (JP), filed on Nov. 18, 2020.
Prior Publication US 2022/0158414 A1, May 19, 2022
Int. Cl. H01S 5/22 (2006.01); H01S 5/042 (2006.01)
CPC H01S 5/22 (2013.01) [H01S 5/04256 (2019.08)] 7 Claims
OG exemplary drawing
 
1. A laser element comprising:
a substrate;
an n-type semiconductor layer, a light emitting layer, a p-type semiconductor layer, and an electrode layer successively laminated on one principal surface of the substrate; and
a dielectric layer,
wherein the p-type semiconductor layer includes a ridge raised in a stripe shape, the ridge including a contact layer formed in a layer including a principal surface on a side opposite the substrate,
a stepped portion defined by recessing the contact layer is formed in at least part of a boundary between a lateral surface among surfaces defining outer edges of the ridge, the lateral surface extending along a lengthwise direction of the ridge, and the principal surface of the ridge,
the electrode layer directly covers the principal surface of the ridge and the stepped portion, and
the dielectric layer covers a region on the one principal surface of the substrate where the ridge does not exist, and covers an outer edge of the electrode layer, on a side opposite a part of the electrode layer that is in contact with the stepped portion, in a part of the electrode layer covering the stepped portion.