US 12,176,450 B2
Solar cell, multi-junction solar cell, solar cell module, and photovoltaic power generation system
Kazushige Yamamoto, Yokohama Kanagawa (JP); Naoyuki Nakagawa, Tokyo (JP); Yukitami Mizuno, Tokyo (JP); Soichiro Shibasaki, Tokyo (JP); Yuya Honishi, Saitama Saitama (JP); Mutsuki Yamazaki, Yokohama Kanagawa (JP); and Yoshiko Hiraoka, Kawasaki Kanagawa (JP)
Assigned to KABUSHIKI KAISHA TOSHIBA, Tokyo (JP); and TOSHIBA ENERGY SYSTEMS & SOLUTIONS CORPORATION, Kawasaki (JP)
Filed by KABUSHIKI KAISHA TOSHIBA, Tokyo (JP); and TOSHIBA ENERGY SYSTEMS & SOLUTIONS CORPORATION, Kawasaki (JP)
Filed on Sep. 7, 2022, as Appl. No. 17/938,988.
Application 17/938,988 is a continuation of application No. PCT/JP2020/038403, filed on Oct. 9, 2020.
Prior Publication US 2023/0017543 A1, Jan. 19, 2023
Int. Cl. H01L 31/072 (2012.01); H01L 31/0336 (2006.01); H01L 31/05 (2014.01)
CPC H01L 31/072 (2013.01) [H01L 31/0336 (2013.01); H01L 31/0504 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A solar cell comprising:
a p-electrode;
an n-electrode;
a p-type light-absorbing layer located between the p-electrode and the n-electrode and mainly containing a cuprous oxide; and
an n-type layer including
a first n-type layer which is located between the p-type light-absorbing layer and the n-electrode and mainly contains a compound represented by Gax1M1x2M2x3M3x4Ox5, the M1 being Al or/and B, the M2 being one or more selected from the group consisting of In, Ti, Zn, Hf, and Zr, the M3 being one or more selected from the group consisting of Sn, Si, and Ge, the x1 and the x5 being more than 0, the x2, the x3, and the x4 being 0 or more, a sum of the x1, the x2, the x3, and the x4 being 2, and the x5 being 3.0 or more and 3.8 or less, and a second n-type layer which is located between the first n-type layer and the n-electrode and mainly contains a compound represented by Gay1M1y2M2y3M3y4Oy5, the y1 and the y5 being more than 0, the y2, the y3, and the y4 being 0 or more, a sum of the y1, the y2, the y3, and the y4 being 2, and the y5 being 3.0 or more and 3.8 or less, or
a first n-type region which is located between the p-type light-absorbing layer and the n-electrode and mainly contains a compound represented by Gax1M1x2M2x3M3x4Ox5, the M1 being Al or/and B, the M2 being one or more selected from the group consisting of In, Ti, Zn, Hf, and Zr, the M3 being one or more selected from the group consisting of Sn, Si, and Ge, the x1 and the x5 being more than 0, the x2, the x3, and the x4 being 0 or more, a sum of the x1, the x2, the x3, and the x4 being 2, and the x5 being 3.0 or more and 3.8 or less, and a second n-type region which is located between the first n-type region and the n-electrode and mainly contains a compound represented by Gay1M1y2M2y3M3y4Oy5, the y1 and the y5 being more than 0, the y2, the y3, and the y4 being 0 or more, a sum of the y1, the y2, the y3, and the y4 being 2, and the y5 being 3.0 or more and 3.8 or less,
wherein (x2+x3) is larger than (y2+y3), and
x4/(x1+x2+x3+x4) is 0.00 or more and 0.15 or less.