US 12,176,439 B2
Semiconductor device and method for manufacturing semiconductor device
Shunpei Yamazaki, Tokyo (JP); Erika Takahashi, Kanagawa (JP); Tsutomu Murakawa, Kanagawa (JP); Shinya Sasagawa, Kanagawa (JP); and Katsuaki Tochibayashi, Kanagawa (JP)
Assigned to Semiconductor Energy Laboratory Co., Ltd., Kanagawa-ken (JP)
Appl. No. 17/428,753
Filed by SEMICONDUCTOR ENERGY LABORATORY CO., LTD., Atsugi (JP)
PCT Filed Feb. 13, 2020, PCT No. PCT/IB2020/051160
§ 371(c)(1), (2) Date Aug. 5, 2021,
PCT Pub. No. WO2020/170082, PCT Pub. Date Aug. 27, 2020.
Claims priority of application No. 2019-030918 (JP), filed on Feb. 22, 2019; and application No. 2019-042790 (JP), filed on Mar. 8, 2019.
Prior Publication US 2022/0077322 A1, Mar. 10, 2022
Int. Cl. H01L 29/786 (2006.01); H01L 29/04 (2006.01); H01L 29/66 (2006.01)
CPC H01L 29/78696 (2013.01) [H01L 29/045 (2013.01); H01L 29/66969 (2013.01); H01L 29/7869 (2013.01)] 14 Claims
OG exemplary drawing
 
1. A semiconductor device comprising:
a first oxide;
a second oxide and a third oxide over the first oxide;
a first conductor over the second oxide;
a second conductor over the third oxide;
a fourth oxide over the first oxide and between the second oxide and the third oxide;
a fifth oxide over the fourth oxide,
a first insulator over the fifth oxide; and
a third conductor over the first insulator,
wherein the first oxide comprises a groove in a region not overlapping with the second oxide and the third oxide,
wherein the first oxide comprises a first layered crystal parallel or substantially parallel to a surface where the first oxide is formed,
wherein in the groove, the fourth oxide comprises a second layered crystal parallel or substantially parallel to the surface where the first oxide is formed,
wherein at least one of a concentration of aluminum atoms at an interface between the first oxide and the fourth oxide and a concentration of aluminum atoms in a region adjacent to the interface is less than or equal to 2.0 atomic %, and
wherein a difference between a level at an interface between the first oxide and the second oxide and a level at an interface between the fourth oxide and the fifth oxide is smaller than a thickness of the fourth oxide.