US 12,176,436 B2
Semiconductor device and semiconductor system including semiconductor device
Masahiro Sugimoto, Kyoto (JP); Isao Takahashi, Kyoto (JP); and Takashi Shinohe, Kyoto (JP)
Assigned to FLOSFIA INC., Kyoto (JP)
Appl. No. 17/258,852
Filed by FLOSFIA INC., Kyoto (JP)
PCT Filed Jul. 11, 2019, PCT No. PCT/JP2019/027442
§ 371(c)(1), (2) Date Jan. 8, 2021,
PCT Pub. No. WO2020/013260, PCT Pub. Date Jan. 16, 2020.
Claims priority of application No. 2018-132758 (JP), filed on Jul. 12, 2018.
Prior Publication US 2021/0328062 A1, Oct. 21, 2021
Int. Cl. H01L 29/04 (2006.01); H01L 29/10 (2006.01); H01L 29/24 (2006.01); H01L 29/786 (2006.01)
CPC H01L 29/7869 (2013.01) [H01L 29/04 (2013.01); H01L 29/1054 (2013.01); H01L 29/24 (2013.01); H01L 29/78696 (2013.01)] 27 Claims
OG exemplary drawing
 
1. A semiconductor device comprising:
a first electrode;
a second electrode;
a gate electrode;
an inversion channel region; and
an oxide semiconductor film comprising a crystal that has a corundum structure,
the inversion channel region being only in the oxide semiconductor film,
wherein when a voltage is applied to the gate electrode, a conductivity type of the inversion channel region is inverted and electrons flow from the first electrode to the second electrode, and
wherein the crystal is a p-type semiconductor.