US 12,176,431 B2
Electronic device employing two-dimensional electron gas with reduced leakage current
Tzu-Wen Shih, Hsinchu (TW); Der-Ming Kuo, Hsinchu (TW); Ching-Hua Chiu, Hsinchu (TW); Meng-Shao Hsieh, Taipei (TW); and Shih-Hsiang Tai, New Taipei (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Company, Hsinchu (TW)
Filed on May 11, 2022, as Appl. No. 17/742,080.
Prior Publication US 2023/0369480 A1, Nov. 16, 2023
Int. Cl. H01L 29/778 (2006.01); H01L 29/20 (2006.01); H01L 29/205 (2006.01); H01L 29/40 (2006.01); H01L 29/423 (2006.01); H01L 29/66 (2006.01)
CPC H01L 29/7786 (2013.01) [H01L 29/2003 (2013.01); H01L 29/205 (2013.01); H01L 29/401 (2013.01); H01L 29/42316 (2013.01); H01L 29/66462 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor device comprising:
an insulating region surrounding an active area having a channel direction and a transverse direction that is transverse to the channel direction;
a source region and a drain region disposed in the active area and spaced apart along the channel direction;
a channel disposed in the active area and interposed between the source region and the drain region, the channel comprising a two-dimensional electron gas (2DEG);
a gate line oriented along the transverse direction and disposed on the channel and having a gate width in the channel direction, the gate line comprising gate material; and
a gate line terminus at each end of the gate line, each gate line terminus comprising the gate material and each gate line terminus having a width in the channel direction that is at least 1.2 time the gate width.