US 12,176,425 B2
Semiconductor device and forming method thereof
Hsin-Yi Lee, Hsinchu (TW); Cheng-Lung Hung, Hsinchu (TW); and Chi On Chui, Hsinchu (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed by TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed on May 10, 2023, as Appl. No. 18/315,204.
Application 18/315,204 is a continuation of application No. 17/140,308, filed on Jan. 4, 2021, granted, now 11,688,797.
Prior Publication US 2023/0275143 A1, Aug. 31, 2023
Int. Cl. H01L 29/66 (2006.01); H01L 21/8234 (2006.01); H01L 29/06 (2006.01); H01L 29/78 (2006.01)
CPC H01L 29/6681 (2013.01) [H01L 21/823431 (2013.01); H01L 29/0669 (2013.01); H01L 29/66545 (2013.01); H01L 29/7851 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor device, comprising:
a substrate;
a plurality of semiconductor layers over the substrate;
a first fill metal layer around the plurality of semiconductor layers;
a second fill metal layer over the first fill metal layer;
a third fill metal layer over the second fill metal layer, wherein the first fill metal layer, the second fill metal layer and the third fill metal layer are selected from a group consisting of fluorine-free TiN, fluorine-free TaN and fluorine-free W;
a work function metal layer between the plurality of semiconductor layers and the first fill metal layer; and
a glue layer between the work function metal layer and the first fill metal layer, wherein the first fill metal layer, the second fill metal layer, the third fill metal layer and the glue layer do not fully surround the plurality of semiconductor lavers.