US 12,176,424 B2
FinFET device comprising plurality of dummy protruding features
Che-Cheng Chang, New Taipei (TW); Po-Chi Wu, Zhubei (TW); Chih-Han Lin, Hsinchu (TW); and Horng-Huei Tseng, Hsinchu (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed on Feb. 14, 2022, as Appl. No. 17/671,230.
Application 16/049,879 is a division of application No. 15/640,920, filed on Jul. 3, 2017, granted, now 10,355,110, issued on Jul. 16, 2019.
Application 17/671,230 is a continuation of application No. 16/049,879, filed on Jul. 31, 2018, granted, now 11,251,289.
Claims priority of provisional application 62/405,735, filed on Oct. 7, 2016.
Claims priority of provisional application 62/370,099, filed on Aug. 2, 2016.
Prior Publication US 2022/0165865 A1, May 26, 2022
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 29/76 (2006.01); H01L 21/8234 (2006.01); H01L 27/088 (2006.01); H01L 29/06 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01); H01L 29/94 (2006.01)
CPC H01L 29/6681 (2013.01) [H01L 21/823431 (2013.01); H01L 21/823481 (2013.01); H01L 27/0886 (2013.01); H01L 29/0649 (2013.01); H01L 29/7848 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A device comprising:
a first triplet of fins on a substrate;
a second triplet of fins on the substrate adjacent the first triplet of fins; and
a first protruding feature, a second protruding feature, and a third protruding feature on the substrate and interposed between the first triplet of fins and the second triplet of fins, wherein the first protruding feature, the second protruding feature, and the third protruding feature are only protruding features interposed between the first triplet of fins and the second triplet of fins, wherein the second protruding feature is interposed between the first protruding feature and the third protruding feature, and wherein a height of the second protruding feature is greater than a height of the first protruding feature and a height of the third protruding feature.