US 12,176,422 B2
Controlling fin-thinning through feedback
Tsu-Hui Su, Taipei (TW); Chun-Hsiang Fan, Hsinchu (TW); Yu-Wen Wang, New Taipei (TW); Ming-Hsi Yeh, Hsinchu (TW); and Kuo-Bin Huang, Jhubei (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed on Jul. 28, 2023, as Appl. No. 18/361,540.
Application 18/361,540 is a continuation of application No. 17/452,178, filed on Oct. 25, 2021, granted, now 11,923,437.
Application 17/452,178 is a continuation of application No. 16/527,346, filed on Jul. 31, 2019, granted, now 11,158,726, issued on Oct. 26, 2021.
Prior Publication US 2023/0387263 A1, Nov. 30, 2023
Int. Cl. H01L 29/66 (2006.01); H01L 21/306 (2006.01); H01L 21/66 (2006.01); H01L 21/762 (2006.01); H01L 21/8238 (2006.01)
CPC H01L 29/66795 (2013.01) [H01L 21/30604 (2013.01); H01L 21/76224 (2013.01); H01L 21/823821 (2013.01); H01L 21/823878 (2013.01); H01L 22/12 (2013.01); H01L 29/66545 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method comprising:
forming a first semiconductor fin comprising a first semiconductor material;
forming a second semiconductor fin comprising a second semiconductor material different from the first semiconductor material;
performing a first thinning process on the first semiconductor fin using a first etching chemical, wherein in the first thinning process, both of the first semiconductor fin and the second semiconductor fin are exposed to the first etching chemical, and the first semiconductor fin is thinned at a faster rate than the second semiconductor fin; and
performing a second thinning process on the second semiconductor fin using a second etching chemical, wherein in the second thinning process, both of the first semiconductor fin and the second semiconductor fin are exposed to the second etching chemical, and the second semiconductor fin is thinned at a faster rate than the first semiconductor fin.