US 12,176,412 B2
Semiconductor devices and methods of manufacturing thereof
Shih-Yao Lin, New Taipei (TW); Hsiao Wen Lee, Hsinchu (TW); Yu-Shan Cheng, Hsinchu (TW); and Ming-Ching Chang, Hsinchu (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed on Oct. 4, 2021, as Appl. No. 17/493,699.
Claims priority of provisional application 63/166,625, filed on Mar. 26, 2021.
Prior Publication US 2022/0310819 A1, Sep. 29, 2022
Int. Cl. H01L 29/49 (2006.01); H01L 21/02 (2006.01); H01L 21/28 (2006.01); H01L 29/06 (2006.01); H01L 29/423 (2006.01); H01L 29/66 (2006.01); H01L 29/786 (2006.01)
CPC H01L 29/4991 (2013.01) [H01L 21/0259 (2013.01); H01L 21/28123 (2013.01); H01L 29/0665 (2013.01); H01L 29/42392 (2013.01); H01L 29/4908 (2013.01); H01L 29/6653 (2013.01); H01L 29/66545 (2013.01); H01L 29/6656 (2013.01); H01L 29/66742 (2013.01); H01L 29/78618 (2013.01); H01L 29/78696 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor device, comprising:
a channel structure, extending along a first lateral direction, that is disposed over a substrate;
a gate structure, extending along a second lateral direction perpendicular to the first lateral direction, that straddles the channel structure;
an epitaxial structure, coupled to the channel structure, that is disposed next to the gate structure;
a first gate spacer and a second gate spacer each comprising a first portion disposed between the gate structure and the epitaxial structure along the first lateral direction; and
an air gap interposed between the first portion of the first gate spacer and the first portion of the second gate spacer;
wherein the air gap exposes a second portion of the first gate spacer that extends in the first lateral direction, wherein the second gate spacer further comprises a second portion that extends in the first lateral direction, and wherein the second portion of the first gate spacer and the second portion of the second gate spacer, disposed below the epitaxial structure, are in direct contact with each other.