US 12,176,411 B2
Semiconductor device with isolation transistors and back side voltage metal lines
Jhon-Jhy Liaw, Zhudong Township, Hsinchu County (TW)
Assigned to Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed on Jan. 12, 2022, as Appl. No. 17/574,000.
Prior Publication US 2023/0223455 A1, Jul. 13, 2023
Int. Cl. H01L 29/423 (2006.01); H01L 23/48 (2006.01); H01L 29/06 (2006.01); H01L 29/786 (2006.01)
CPC H01L 29/42392 (2013.01) [H01L 23/481 (2013.01); H01L 29/0665 (2013.01); H01L 29/78618 (2013.01); H01L 29/78696 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor device, comprising:
circuit cells, wherein each of the circuit cells comprises functional transistors having source/drain features and nanostructures;
isolation transistors at cell boundaries of the circuit cells, wherein the isolation transistors electrically isolate the circuit cells from each other, wherein nanostructures of the isolation transistors, the source/drain features of the functional transistors, and the nanostructures of the functional transistors are connected with each other into a continuous rectangular shape from a top view;
a first metal line under the isolation transistors; and
connection structures connecting gate structures of the isolation transistors to the first metal line.