US 12,176,409 B2
Semiconductor devices and methods of manufacturing thereof
Shih-Yao Lin, New Taipei (TW); Hsiao Wen Lee, Hsinchu (TW); and Ming-Ching Chang, Hsinchu (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed on Aug. 30, 2021, as Appl. No. 17/461,536.
Prior Publication US 2023/0068279 A1, Mar. 2, 2023
Int. Cl. H01L 29/423 (2006.01); H01L 21/8234 (2006.01); H01L 29/06 (2006.01); H01L 29/66 (2006.01); H01L 29/786 (2006.01)
CPC H01L 29/42392 (2013.01) [H01L 21/823418 (2013.01); H01L 29/0649 (2013.01); H01L 29/66545 (2013.01); H01L 29/66742 (2013.01); H01L 29/78618 (2013.01); H01L 29/78696 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor device, comprising:
a substrate;
a first plurality of channel layers disposed over the substrate, wherein the first plurality of channel layers extend along a first direction and are vertically spaced from each other;
a first active gate structure that extends along a second direction perpendicular to the first direction and wraps around each of the first plurality of channel layers;
a first source/drain structure that includes a first sidewall and a second sidewall facing toward and away from the first direction, respectively;
a semiconductor cladding layer, integrally formed as a one-piece structure, that extends across the first plurality of channel layers;
wherein the first source/drain structure is coupled to each of the first plurality of channel layers through the first sidewall of the first source/drain structure and to the semiconductor cladding layer through the second sidewall of the first source/drain structure;
an isolation structure that extends into the substrate and is laterally disposed opposite the first active gate structure from the first source/drain structure; and
an inactive gate structure that also extends along the second direction and is vertically disposed over the isolation structure and the semiconductor cladding layer.