US 12,176,401 B2
Seam-filling of metal gates with Si-containing layers
Hsin-Yi Lee, Hsinchu (TW); Weng Chang, Hsinchu (TW); and Chi On Chui, Hsinchu (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed on Aug. 9, 2023, as Appl. No. 18/446,681.
Application 18/446,681 is a division of application No. 17/405,406, filed on Aug. 18, 2021, granted, now 11,948,981.
Claims priority of provisional application 63/222,013, filed on Jul. 15, 2021.
Prior Publication US 2024/0021680 A1, Jan. 18, 2024
Int. Cl. H01L 29/00 (2006.01); H01L 21/28 (2006.01); H01L 21/8234 (2006.01); H01L 27/088 (2006.01); H01L 29/06 (2006.01); H01L 29/40 (2006.01); H01L 29/423 (2006.01); H01L 29/66 (2006.01); H01L 29/786 (2006.01)
CPC H01L 29/401 (2013.01) [H01L 21/28035 (2013.01); H01L 21/28088 (2013.01); H01L 21/823437 (2013.01); H01L 21/823462 (2013.01); H01L 21/823475 (2013.01); H01L 27/088 (2013.01); H01L 29/0665 (2013.01); H01L 29/42392 (2013.01); H01L 29/66545 (2013.01); H01L 29/66742 (2013.01); H01L 29/78645 (2013.01)] 20 Claims
OG exemplary drawing
 
1. An integrated circuit structure comprising:
a plurality of semiconductor layers, with upper ones of the plurality of semiconductor layers overlapping respective lower ones of the plurality of semiconductor layers;
a gate stack comprising:
lower portions between the plurality of semiconductor layers; and
an upper portion overlapping the plurality of semiconductor layers, wherein the upper portion comprises:
a conductive layer comprising a bottom portion and opposite vertical portions, wherein the opposite vertical portions comprise a first vertical portion and a second vertical portion on opposite side of, and connecting to opposite ends of, the bottom portion; and
a filling layer over the bottom portion and between the opposite vertical portions of, the conductive layer, wherein the filling layer has a higher silicon atomic percentage than the conductive layer, and wherein the filling layer comprises a top surface continuously extending from the first vertical portion to the second vertical portion.