US 12,176,394 B2
Different height cell subregions, and semiconductor device having the same
Jung-Chan Yang, Hsinchu (TW); Hui-Zhong Zhuang, Hsinchu (TW); Lee-Chung Lu, Hsinchu (TW); Ting-Wei Chiang, Hsinchu (TW); and Li-Chun Tien, Hsinchu (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed by TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed on Jul. 25, 2023, as Appl. No. 18/358,694.
Application 17/205,670 is a division of application No. 16/204,474, filed on Nov. 29, 2018, granted, now 10,971,586, issued on Apr. 6, 2021.
Application 18/358,694 is a continuation of application No. 17/205,670, filed on Mar. 18, 2021, granted, now 11,756,999.
Claims priority of provisional application 62/691,600, filed on Jun. 28, 2018.
Prior Publication US 2023/0378267 A1, Nov. 23, 2023
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 29/06 (2006.01); G06F 30/392 (2020.01); H01L 21/033 (2006.01); H01L 21/8238 (2006.01); H01L 27/02 (2006.01); H01L 27/092 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01)
CPC H01L 29/0696 (2013.01) [G06F 30/392 (2020.01); H01L 21/0337 (2013.01); H01L 21/823821 (2013.01); H01L 27/0207 (2013.01); H01L 27/0924 (2013.01); H01L 29/66545 (2013.01); H01L 29/6681 (2013.01); H01L 29/7851 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor device comprising:
fins, extending substantially parallel to a first direction, configured to include:
first active fins having a first conductivity type; and
second active fins having a second conductivity type; and
at least one gate structure formed over corresponding ones of the fins and extending substantially parallel to a second direction which is substantially perpendicular to the first direction; and
wherein:
the fins and the at least one gate structure are located in at least one cell region; and
each cell region, relative to the second direction, including:
a first active region which includes a sequence of three or more consecutive first active fins located in a central portion of the cell region;
a second active region which includes one or more second active fins located between the first active region and a first edge of the cell region; and
a third active region which includes one or more second active fins located between the first active region and a second edge of the cell region.