US 12,176,387 B2
Trench capacitor profile to decrease substrate warpage
Hsin-Li Cheng, Hsin Chu (TW); Jyun-Ying Lin, Wujie Township (TW); Alexander Kalnitsky, San Francisco, CA (US); Shih-Fen Huang, Jhubei (TW); Shu-Hui Su, Tucheng (TW); Ting-Chen Hsu, Taichung (TW); Tuo-Hsin Chien, Zhubei (TW); Felix Ying-Kit Tsui, Cupertino, CA (US); Shi-Min Wu, Changhua County (TW); and Yu-Chi Chang, Kaohsiung (TW)
Assigned to Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu (TW)
Filed on Jul. 31, 2023, as Appl. No. 18/362,146.
Application 18/362,146 is a continuation of application No. 17/370,067, filed on Jul. 8, 2021, granted, now 11,769,792.
Application 17/370,067 is a continuation of application No. 16/728,452, filed on Dec. 27, 2019, granted, now 11,063,157, issued on Jul. 13, 2021.
Prior Publication US 2023/0378251 A1, Nov. 23, 2023
Int. Cl. H01L 29/94 (2006.01); H01L 21/02 (2006.01); H01L 21/3213 (2006.01); H01L 21/764 (2006.01); H01L 23/00 (2006.01); H01L 29/66 (2006.01); H01L 49/02 (2006.01)
CPC H01L 28/91 (2013.01) [H01L 21/02164 (2013.01); H01L 21/02236 (2013.01); H01L 21/32139 (2013.01); H01L 21/764 (2013.01); H01L 23/562 (2013.01); H01L 28/92 (2013.01); H01L 29/66181 (2013.01); H01L 29/945 (2013.01)] 20 Claims
OG exemplary drawing
 
1. An integrated chip, comprising:
a capacitor overlying a substrate and comprising a plurality of conductive layers and a plurality of dielectric layers, wherein the plurality of conductive layers and the plurality of dielectric layers define a base structure and a first protrusion structure extending downward from the base structure towards a bottom surface of the substrate, wherein the first protrusion structure comprises one or more surfaces defining a first cavity, wherein a top of the first cavity is disposed below the base structure; and
an insulator layer disposed along a bottom surface of the base structure and along opposing sidewalls of the first protrusion structure, wherein a first thickness of the insulator layer along a first sidewall of the opposing sidewalls of the first protrusion structure is greater than a thickness of an individual conductive layer in the plurality of conductive layers.