US 12,176,375 B2
Image sensor structure including nanowire structure and manufacturing method thereof
Zhaoyao Zhan, Singapore (SG); Jing Feng, Singapore (SG); Qianwei Ding, Singapore (SG); Xiaohong Jiang, Singapore (SG); and Ching-Hwa Tey, Singapore (SG)
Assigned to United Microelectronics Corp., Hsinchu (TW)
Filed by United Microelectronics Corp., Hsinchu (TW)
Filed on May 17, 2021, as Appl. No. 17/322,599.
Claims priority of application No. 110113759 (TW), filed on Apr. 16, 2021.
Prior Publication US 2022/0336519 A1, Oct. 20, 2022
Int. Cl. H01L 27/146 (2006.01)
CPC H01L 27/14647 (2013.01) [H01L 27/1461 (2013.01); H01L 27/14636 (2013.01); H01L 27/14689 (2013.01)] 10 Claims
OG exemplary drawing
 
1. An image sensor structure, comprising:
a substrate;
a nanowire structure comprising a first doped layer, a second doped layer, a third doped layer, and a fourth doped layer sequentially stacked on the substrate, wherein the first doped layer and the third doped layer have a first conductive type, and the second doped layer and the fourth doped layer have a second conductive type;
a first conductive line connected to a sidewall of the second doped layer;
a second conductive line connected to a sidewall of the third doped layer; and
a third conductive line connected to the fourth doped layer, wherein
the first conductive type and the second conductive type are different conductive types,
a maximum width of the first doped layer, a maximum width of the second doped layer, a maximum width of the third doped layer, and a maximum width of the fourth doped layer are the same, and
a cross-sectional shape of the first conductive line is L-shaped,
a cross-sectional shape of the second conductive line is L-shaped,
an entire topmost surface of the first conductive line is lower than an entire topmost surface of the second doped layer, and
an entire topmost surface of the second conductive line is lower than an entire topmost surface of the third doped layer.