US 12,176,346 B2
Semiconductor devices, semiconductor structures and methods for fabricating a semiconductor structure
Chia-Chung Chen, Keelung (TW); Szu-Lin Liu, Hsinchu (TW); Jaw-Juinn Horng, Hsinchu (TW); Hui-Zhong Zhuang, Kaohsiung (TW); Chih-Liang Chen, Hsinchu (TW); and Ya Yun Liu, Jhubei (TW)
Assigned to Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed on May 30, 2022, as Appl. No. 17/804,565.
Claims priority of provisional application 63/271,425, filed on Oct. 25, 2021.
Prior Publication US 2023/0127579 A1, Apr. 27, 2023
Int. Cl. H01L 27/082 (2006.01); G01K 7/01 (2006.01); H01L 21/8228 (2006.01); H01L 29/06 (2006.01); H01L 29/08 (2006.01); H01L 29/10 (2006.01); H01L 29/66 (2006.01); H01L 29/735 (2006.01)
CPC H01L 27/082 (2013.01) [G01K 7/01 (2013.01); H01L 21/8228 (2013.01); H01L 29/0649 (2013.01); H01L 29/0808 (2013.01); H01L 29/1008 (2013.01); H01L 29/6625 (2013.01); H01L 29/735 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor device, comprising:
a bipolar junction transistor (BJT) structure comprising:
emitters in a first well having a first conductive type;
collectors in respective second wells, the second wells having a second conductive type different from the first conductive type and being spaced apart from each other with the first well therebetween; and
bases in the first well and between the emitters and the collectors, wherein the BJT structure comprises active regions having different widths that form the emitters, the collectors, and the bases;
wherein the BJT structure is formed in a transistor cell comprising a plurality of standard cells with different cell heights, and the standard cells forming the collectors are smaller in height than the standard cells forming the bases, and the standard cells forming the bases are smaller in height than the standard cells forming the emitters.