US 12,176,338 B2
Semiconductor device, method of and system for manufacturing semiconductor device
Wei-Hsin Tsai, Hsinchu (TW); Hui-Zhong Zhuang, Hsinchu (TW); Chih-Liang Chen, Hsinchu (TW); and Li-Chun Tien, Hsinchu (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed by TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed on Nov. 27, 2023, as Appl. No. 18/519,486.
Application 18/519,486 is a continuation of application No. 17/390,108, filed on Jul. 30, 2021, granted, now 11,855,070.
Prior Publication US 2024/0096865 A1, Mar. 21, 2024
Int. Cl. H01L 27/02 (2006.01); H01L 21/8238 (2006.01); H01L 23/522 (2006.01); H01L 27/092 (2006.01)
CPC H01L 27/0207 (2013.01) [H01L 21/823871 (2013.01); H01L 23/5226 (2013.01); H01L 27/092 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor device, comprising:
a first metal layer comprising:
a first conductor that extends in a first direction;
a second conductor that extends in the first direction, wherein the second conductor is directly adjacent to the first conductor;
a second metal layer comprising a third conductor that extends in a second direction, wherein the second direction is transverse to the first direction;
a drain/source contact that extends in the second direction and is connected to the second conductor; and
at least one conductive via that connects the first conductor and the second conductor through the third conductor.