US 12,176,321 B2
Semiconductor packages and method of forming the same
Hung-Jui Kuo, Hsinchu (TW); Hui-Jung Tsai, Hsinchu (TW); Chia-Wei Wang, Hsinchu (TW); and Yu-Tzu Chang, Hsinchu (TW)
Assigned to Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed on Mar. 31, 2021, as Appl. No. 17/218,171.
Prior Publication US 2022/0320039 A1, Oct. 6, 2022
Int. Cl. H01L 23/00 (2006.01); H01L 23/538 (2006.01); H01L 25/065 (2023.01); H01L 27/06 (2006.01)
CPC H01L 24/82 (2013.01) [H01L 23/5384 (2013.01); H01L 24/80 (2013.01); H01L 24/95 (2013.01); H01L 25/0657 (2013.01); H01L 27/0688 (2013.01); H01L 2224/80896 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method of forming a semiconductor package, comprising:
providing a first integrated circuit structure, wherein the first integrated circuit structure comprises a first substrate;
performing a nitrogen-containing plasma to a back side of the first substrate, so as to transform a portion of the first substrate into a first bonding layer of the first integrated circuit structure;
providing a second integrated circuit structure, wherein the second integrated circuit structure comprises a second substrate and a second bonding layer over the second substrate; and
bonding the second integrated circuit structure to the first integrated circuit structure through the second bonding layer of the second integrated circuit structure and the first bonding layer of the first integrated circuit structure,
wherein the first integrated circuit structure further comprises through substrate vias penetrating through the first substrate, and the nitrogen-containing plasma is performed to surface portions of the through substrate vias to form nitridized metal portions.