US 12,176,316 B2
Half-bridge module for an inverter of an electric drive of an electric vehicle or a hybrid vehicle and an inverter for an electric drive of an electric vehicle or a hybrid vehicle
Manuel Raimann, Salem (DE); and Ivonne Trenz, Friedrichshafen (DE)
Assigned to ZF Friedrichshafen AG, Friedrichshafen (DE)
Filed by ZF Friedrichshafen AG, Friedrichshafen (DE)
Filed on Mar. 25, 2021, as Appl. No. 17/212,973.
Claims priority of application No. 102020204358.2 (DE), filed on Apr. 3, 2020.
Prior Publication US 2021/0313296 A1, Oct. 7, 2021
Int. Cl. H01L 23/00 (2006.01); H01L 23/498 (2006.01); H01L 25/07 (2006.01); H01L 25/18 (2023.01); H02M 7/00 (2006.01)
CPC H01L 24/73 (2013.01) [H01L 23/49838 (2013.01); H01L 24/37 (2013.01); H01L 25/072 (2013.01); H01L 25/18 (2013.01); H02M 7/003 (2013.01); H01L 24/40 (2013.01); H01L 24/48 (2013.01); H01L 2224/37012 (2013.01); H01L 2224/40225 (2013.01); H01L 2224/48225 (2013.01); H01L 2224/73221 (2013.01); H01L 2924/10272 (2013.01); H01L 2924/1203 (2013.01); H01L 2924/13055 (2013.01); H01L 2924/13091 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A half-bridge module for an inverter for an electric drive for an electric vehicle or a hybrid vehicle, comprising:
a substrate having a plurality of side edges and a base substrate area including an outer border of the base substrate area delineated by the side edges of the substrate such that the base substrate area does not extend over any side edge of the substrate;
semiconductor switches arranged on the substrate;
power connections electrically connected to the semiconductor switches; and
signal connections electrically connected to the semiconductor switches,
wherein the semiconductor switches are configured to be switched via the signal connections and allow or interrupt electricity transmission between the power connections,
wherein the signal connections and the power connections are all arranged on a same side of the substrate, and covered by a casting compound,
wherein the power connections and the signal connections are accessible from the same side of the substrate, such that the power connections and the signal connections extend through the casting compound and out of a top surface of the casting compound, as seen from the same side of the substrate,
and wherein an entirety of each of the power connections and the signal connections are located within the base substrate area and do not extend outside of the base substrate area, as seen from the direction the power connections and the signal connections pass through and out of the casting compound,
wherein the semiconductor switches are in electrical contact in part via bond wires and in part via lead frames.