US 12,176,302 B2
Semiconductor device and method for manufacturing semiconductor device
Hidetoshi Abe, Kyoto (JP); Makoto Ikenaga, Kyoto (JP); and Kensei Takamoto, Kyoto (JP)
Assigned to ROHM CO., LTD., Kyoto (JP)
Filed by ROHM CO., LTD., Kyoto (JP)
Filed on Sep. 27, 2023, as Appl. No. 18/475,946.
Application 18/475,946 is a continuation of application No. 18/074,399, filed on Dec. 2, 2022, granted, now 11,804,453.
Application 18/074,399 is a continuation of application No. 17/260,499, granted, now 11,545,446, previously published as PCT/JP2019/028192, filed on Jul. 18, 2019.
Claims priority of application No. 2018-136826 (JP), filed on Jul. 20, 2018.
Prior Publication US 2024/0030159 A1, Jan. 25, 2024
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 23/00 (2006.01); H01L 21/48 (2006.01); H01L 21/56 (2006.01); H01L 23/31 (2006.01); H01L 23/495 (2006.01)
CPC H01L 23/562 (2013.01) [H01L 21/4825 (2013.01); H01L 21/565 (2013.01); H01L 23/3114 (2013.01); H01L 23/49513 (2013.01); H01L 23/4952 (2013.01); H01L 23/49562 (2013.01)] 12 Claims
OG exemplary drawing
 
1. A SiC semiconductor device comprising:
a SiC semiconductor element having an element front surface and an element back surface facing away from each other in a first direction, the SiC semiconductor element farther having an element side surface connected to the element front surface and the element back surface;
a die pad on which the SiC semiconductor element is mounted;
a lead spaced apart from the die pad;
a conductive member bonded to the lead and electrically connecting the SiC semiconductor element and the lead;
a resin composition;
a sealing resin covering part of the lead, the SiC semiconductor element and the resin composition; and
a conductive bonding material bonding the SiC semiconductor element and the die pad,
wherein the resin composition includes a first portion covering at least a part of the element front surface, the first portion is placed at least a peripheral portion of the element front surface in a cross section.