US 12,176,299 B2
Semiconductor device and manufacturing method thereof
Yu-Wei Lin, New Taipei (TW); Chun-Yen Lan, Hsinchu (TW); Tzu-Ting Chou, Hsinchu (TW); Tzu-Shiun Sheu, Hsinchu (TW); Chih-Wei Lin, Hsinchu County (TW); Shih-Peng Tai, Hsinchu County (TW); Wei-Cheng Wu, Hsinchu (TW); and Ching-Hua Hsieh, Hsinchu (TW)
Assigned to Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed on Feb. 3, 2023, as Appl. No. 18/164,554.
Application 18/164,554 is a continuation of application No. 17/148,572, filed on Jan. 14, 2021, granted, now 11,587,887.
Prior Publication US 2023/0187383 A1, Jun. 15, 2023
Int. Cl. H01L 23/16 (2006.01); H01L 21/48 (2006.01); H01L 23/00 (2006.01); H01L 23/367 (2006.01); H01L 23/538 (2006.01)
CPC H01L 23/562 (2013.01) [H01L 21/4853 (2013.01); H01L 21/4857 (2013.01); H01L 21/4871 (2013.01); H01L 23/16 (2013.01); H01L 23/3672 (2013.01); H01L 23/5383 (2013.01); H01L 23/5386 (2013.01); H01L 23/5389 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor device, comprising:
a circuit substrate;
a semiconductor package disposed on the circuit substrate; and
a package frame, disposed over the circuit substrate encircling the semiconductor package, the package frame comprising a ring-shaped roof, an outer ring-shaped flange, an inner ring-shaped flange and a cavity, wherein the ring-shaped roof extends laterally from the outer ring-shaped flange to overly the cavity, the ring-shaped roof and the inner ring-shaped flange are spaced apart from each other by a ring-shaped gap, and wherein a top surface of the inner ring-shaped flange and a top surface of the ring-shaped roof are located at a same level height.