US 12,176,288 B2
Semiconductor device including frontside power mesh and backside power mesh and manufacturing method thereof
Wan-Yu Lo, Zhongli (TW); Chin-Shen Lin, Taipei (TW); Chi-Yu Lu, New Taipei (TW); Kuo-Nan Yang, Hsinchu (TW); Chih-Liang Chen, Hsinchu (TW); and Chung-Hsing Wang, Baoshan Township, Hsinchu County (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD, Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed on Jan. 27, 2022, as Appl. No. 17/585,715.
Prior Publication US 2023/0260906 A1, Aug. 17, 2023
Int. Cl. H01L 23/528 (2006.01); H01L 23/50 (2006.01); H01L 27/088 (2006.01); H01L 27/118 (2006.01)
CPC H01L 23/5286 (2013.01) [H01L 23/50 (2013.01); H01L 27/088 (2013.01); H01L 27/11803 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor device, comprising:
a semiconductor substrate;
a power switch formed over a front surface of the semiconductor substrate;
a first power mesh formed over the power switch and directly connected to a first terminal of the power switch; and
a second power mesh formed over a back surface of the semiconductor substrate and directly connected to a second terminal of the power switch;
wherein the first power mesh comprises a first power rail over the power switch and extending in a first direction, and the second power mesh comprises a second power rail under the power switch and extending in the first direction, wherein projections of the first and second power rails on the semiconductor substrate are separated from each other.