US 12,176,271 B2
Semiconductor device
Atsushi Yamaguchi, Kyoto (JP); Hiroyuki Sakairi, Kyoto (JP); and Takukazu Otsuka, Kyoto (JP)
Assigned to ROHM CO., LTD., Kyoto (JP)
Filed by ROHM CO., LTD., Kyoto (JP)
Filed on Oct. 27, 2023, as Appl. No. 18/496,036.
Application 18/496,036 is a continuation of application No. 17/279,197, granted, now 11,842,949, previously published as PCT/JP2019/039776, filed on Oct. 9, 2019.
Claims priority of application No. 2018-194255 (JP), filed on Oct. 15, 2018.
Prior Publication US 2024/0055328 A1, Feb. 15, 2024
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 23/495 (2006.01); H01L 25/16 (2023.01)
CPC H01L 23/49524 (2013.01) [H01L 23/49562 (2013.01); H01L 23/49575 (2013.01); H01L 23/49589 (2013.01); H01L 25/16 (2013.01); H01L 23/49513 (2013.01)] 16 Claims
OG exemplary drawing
 
1. A semiconductor device comprising:
a first terminal and a second terminal;
a first switching element including a first element body, a first gate electrode, a first source electrode, and a first drain electrode; and
a second switching element including a second element body, a second gate electrode, a second source electrode, and a second drain electrode,
wherein the first switching element and the second switching element are connected in series to each other between the first terminal and the second terminal,
the semiconductor device further comprising a first capacitor connected in parallel to the first switching element and the second switching element between the first terminal and the second terminal,
wherein the first switching element and the second switching element are disposed in a first direction,
the first capacitor is disposed in proximity to the first switching element and the second switching element as viewed in a second direction perpendicular to the first direction,
the first element body includes a first obverse surface and a first reverse surface, the first obverse surface being closer to the first capacitor than is the first reverse surface in the second direction,
the second element body includes a second obverse surface and a second reverse surface, the second obverse surface being closer to the first capacitor than is the second reverse surface in the second direction,
the first gate electrode, the first source electrode, and the first drain electrode are disposed on the first reverse surface, and
the second gate electrode, the second source electrode, and the second drain electrode are disposed on the second reverse surface.