US 12,176,270 B2
Package structure with photonic die and method
Hsien-Wei Chen, Hsinchu (TW); Ming-Fa Chen, Taichung (TW); and Ying-Ju Chen, Yunlin County (TW)
Assigned to Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed on Sep. 22, 2023, as Appl. No. 18/472,227.
Application 18/472,227 is a continuation of application No. 17/725,562, filed on Apr. 21, 2022, granted, now 11,791,246.
Application 17/725,562 is a continuation of application No. 16/836,926, filed on Apr. 1, 2020, granted, now 11,315,855, issued on Apr. 26, 2022.
Prior Publication US 2024/0014103 A1, Jan. 11, 2024
Int. Cl. H01L 23/495 (2006.01); H01L 21/768 (2006.01); H01L 23/00 (2006.01); H01L 23/498 (2006.01); H01L 23/528 (2006.01); H01L 21/48 (2006.01); H01L 25/065 (2023.01)
CPC H01L 23/49503 (2013.01) [H01L 21/76898 (2013.01); H01L 23/49827 (2013.01); H01L 23/528 (2013.01); H01L 24/06 (2013.01); H01L 21/4846 (2013.01); H01L 24/13 (2013.01); H01L 24/14 (2013.01); H01L 24/19 (2013.01); H01L 24/81 (2013.01); H01L 25/0657 (2013.01); H01L 2224/08146 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A package structure, comprising:
a die stack structure, bonding to a circuit substrate; and
an underfill, disposed between a top surface of the circuit substrate and a bottom surface of the die stack structure to laterally encapsulating a dam structure between the top surface of the circuit substrate and the bottom surface of the die stack structure,
wherein the underfill has a first curved sidewall at a first sidewall of the die stack structure and a second curved sidewall at a second sidewall of the die stack structure, the first curved sidewall has a first height lower than a second height of the second curved sidewall, and no conductive element is formed in the underfill between the dam structure and the first curved sidewall.