CPC H01L 22/26 (2013.01) [C23C 14/351 (2013.01); C23C 14/545 (2013.01); H01J 37/32715 (2013.01); H01J 37/3455 (2013.01); H01J 37/3458 (2013.01)] | 20 Claims |
1. A method of depositing a material from a target onto a subsequent substrate in a physical vapor deposition (PVD) chamber, comprising:
measuring, at a plurality of locations, a thickness of a film on an initial substrate;
determining at least one location of the plurality of locations where the thickness of the film is less than or greater than an average thickness of the film on the initial substrate; and
moving a first magnet member to redirect and apply a magnetic field to the target in a different orientation than when forming the film on the initial substrate based on the at least one location of the plurality of locations where the thickness of the film is less than or greater than the average thickness of the film formed on the initial substrate, the moving the first magnet member including at least one of the following of:
activating one or more actuators of the first magnet member tilting the first magnet member in a tilt direction about a first line parallel with a surface of the target facing towards the subsequent substrate by changing a slope between the first magnet member and the first line that is parallel to the surface of the target;
activating a drive mechanism of the first magnet member rotating the first magnet member in a rotation direction about a second line perpendicular to the surface of the target; and
activating both the one or more actuators and the drive mechanism of the first magnet member tilting the first magnet member in the tilt direction and rotating the first magnet member in the rotation direction.
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