US 12,176,251 B2
Semiconductor device with profiled work-function metal gate electrode and method of making
Da-Yuan Lee, Jhubei (TW); Hung-Chin Chung, Pingzhen (TW); Hsien-Ming Lee, Changhua (TW); Kuan-Ting Liu, Hsinchu (TW); Syun-Ming Jang, Hsin-Chu (TW); Weng Chang, Hsin-Chu (TW); and Wei-Jen Lo, Hsinchu (TW)
Assigned to Taiwan Semiconductor Manufacturing Company Limited, Hsin-Chu (TW)
Filed by Taiwan Semiconductor Manufacturing Company Limited, Hsin-Chu (TW)
Filed on Jul. 25, 2023, as Appl. No. 18/225,748.
Application 15/450,324 is a division of application No. 14/096,108, filed on Dec. 4, 2013, granted, now 9,590,065, issued on Mar. 7, 2017.
Application 18/225,748 is a continuation of application No. 17/385,424, filed on Jul. 26, 2021, granted, now 11,804,409.
Application 17/385,424 is a continuation of application No. 16/914,883, filed on Jun. 29, 2020, granted, now 11,075,124, issued on Jul. 27, 2021.
Application 16/914,883 is a continuation of application No. 15/450,324, filed on Mar. 6, 2017, granted, now 10,699,966, issued on Jun. 30, 2020.
Prior Publication US 2023/0369132 A1, Nov. 16, 2023
Int. Cl. H01L 21/8238 (2006.01); H01L 21/28 (2006.01); H01L 29/49 (2006.01); H01L 29/51 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01)
CPC H01L 21/823842 (2013.01) [H01L 21/28088 (2013.01); H01L 29/4966 (2013.01); H01L 29/512 (2013.01); H01L 29/517 (2013.01); H01L 29/66545 (2013.01); H01L 29/66606 (2013.01); H01L 29/7833 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor device, comprising:
a metal gate structure, comprising:
a gate dielectric layer; and
a work-function metal layer over the gate dielectric layer, wherein:
the work-function metal layer comprises at least one of TiAl or TiAl3, and
a concentration of the at least one of TiAl or TiAl3 within the work-function metal layer has at least two peaks along a gate length direction of the metal gate structure.