US 12,176,247 B2
Metal oxide composite as etch stop layer
Kai-Fang Cheng, Taoyuan (TW); Chi-Lin Teng, Taichung (TW); Hsin-Yen Huang, New Taipei (TW); and Hai-Ching Chen, Hsinchu (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD, Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu (TW)
Filed on Apr. 25, 2022, as Appl. No. 17/728,295.
Application 17/728,295 is a division of application No. 16/451,432, filed on Jun. 25, 2019, granted, now 11,315,828.
Claims priority of provisional application 62/764,867, filed on Aug. 15, 2018.
Prior Publication US 2022/0246468 A1, Aug. 4, 2022
Int. Cl. H01L 21/02 (2006.01); H01L 21/31 (2006.01); H01L 21/311 (2006.01); H01L 21/3213 (2006.01); H01L 21/768 (2006.01)
CPC H01L 21/76829 (2013.01) [H01L 21/02126 (2013.01); H01L 21/02178 (2013.01); H01L 21/02181 (2013.01); H01L 21/02189 (2013.01); H01L 21/02244 (2013.01); H01L 21/02252 (2013.01); H01L 21/0228 (2013.01); H01L 21/31144 (2013.01); H01L 21/32139 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor device, comprising:
a substrate;
a first conductive feature disposed in a top portion of the substrate;
a metal containing layer disposed on the first conductive feature and in physical contact with a top surface of the substrate, the metal containing layer including a N-M-O—X group, M representing a metal atom, O representing an oxygen atom, X representing an element other than hydrogen, and N representing a nitrogen atom; and
a second conductive feature disposed on and through the metal containing layer and in physical contact with the first conductive feature.