US 12,176,219 B2
Semiconductor device forming method and substrate processing apparatus
Eiji Umeda, Kyoto (JP); and Masaki Inaba, Kyoto (JP)
Assigned to SCREEN HOLDINGS CO., LTD., (JP)
Appl. No. 17/638,879
Filed by SCREEN Holdings Co., Ltd., Kyoto (JP)
PCT Filed Jun. 26, 2020, PCT No. PCT/JP2020/025291
§ 371(c)(1), (2) Date Feb. 28, 2022,
PCT Pub. No. WO2021/039089, PCT Pub. Date Mar. 4, 2021.
Claims priority of application No. 2019-157007 (JP), filed on Aug. 29, 2019.
Prior Publication US 2022/0310406 A1, Sep. 29, 2022
Int. Cl. H01L 21/3213 (2006.01); H01L 21/56 (2006.01)
CPC H01L 21/32134 (2013.01) [H01L 21/56 (2013.01)] 10 Claims
OG exemplary drawing
 
1. A semiconductor device forming method, comprising:
forming a coating layer that selectively covers a portion of a recess provided in a stacked structure supported by a base member, the portion of the recess being located on a front surface side of the recess; and
etching a deep portion, which is deeper than the coating layer, of the recess with a chemical liquid so as to widen a diameter of the deep portion of the recess, wherein the forming the coating layer includes:
forming a partially packed bed that fills the deep portion of the recess;
supplying a water-repellent agent after forming the partially packed bed; and
removing the partially packed bed and the water-repellent agent after supplying the water-repellent agent to form the coating layer on the front surface side of the recess.