US 12,176,217 B2
Method for manufacturing a semiconductor using slurry
Chun-Hung Liao, Taichung (TW); Chung-Wei Hsu, Hsinchu County (TW); Tsung-Ling Tsai, Hsinchu (TW); Chen-Hao Wu, Hsinchu (TW); An-Hsuan Lee, Hsinchu (TW); Shen-Nan Lee, Hsinchu County (TW); Teng-Chun Tsai, Hsinchu (TW); and Huang-Lin Chao, Hillsboro, OR (US)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD., Hsinchu (TW)
Filed by TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD., Hsinchu (TW)
Filed on May 17, 2023, as Appl. No. 18/319,454.
Application 16/940,287 is a division of application No. 16/170,539, filed on Oct. 25, 2018, granted, now 10,727,076, issued on Jul. 28, 2020.
Application 18/319,454 is a continuation of application No. 16/940,287, filed on Jul. 27, 2020, granted, now 11,688,607.
Prior Publication US 2023/0290641 A1, Sep. 14, 2023
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 21/3105 (2006.01); C09G 1/02 (2006.01); C09K 3/14 (2006.01); C23F 1/12 (2006.01); H01L 21/02 (2006.01); H01L 21/306 (2006.01); H01L 21/3063 (2006.01); H01L 21/311 (2006.01)
CPC H01L 21/31053 (2013.01) [C09G 1/02 (2013.01); C09K 3/1409 (2013.01); C23F 1/12 (2013.01); H01L 21/02019 (2013.01); H01L 21/30625 (2013.01); H01L 21/3063 (2013.01); H01L 21/31055 (2013.01); H01L 21/31111 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method for manufacturing a semiconductor, comprising:
forming a metal oxide layer over a gate structure over a substrate;
forming a dielectric layer over the metal oxide layer;
forming a metal layer over the metal oxide layer; and
performing a chemical mechanical polish (CMP) operation to remove a portion of the dielectric layer and a portion of the metal layer, the CMP operation stopping at the metal oxide layer, wherein a slurry used in the CMP operation comprises a ceria compound.