US 12,176,211 B2
Reflection mode photomask
Chun-Lang Chen, Hsinchu (TW); and Chih-Chiang Tu, Hsinchu (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed by TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed on Jul. 21, 2023, as Appl. No. 18/356,366.
Application 18/356,366 is a continuation of application No. 17/667,446, filed on Feb. 8, 2022, granted, now 11,735,421.
Application 17/667,446 is a continuation of application No. 16/773,547, filed on Jan. 27, 2020, granted, now 11,270,884, issued on Mar. 8, 2022.
Application 16/773,547 is a continuation of application No. 15/682,849, filed on Aug. 22, 2017, granted, now 10,553,428, issued on Feb. 4, 2020.
Prior Publication US 2023/0360914 A1, Nov. 9, 2023
This patent is subject to a terminal disclaimer.
Int. Cl. G03F 1/24 (2012.01); G03F 1/46 (2012.01); H01L 21/027 (2006.01); H01L 21/033 (2006.01)
CPC H01L 21/0332 (2013.01) [G03F 1/24 (2013.01); G03F 1/46 (2013.01); H01L 21/0276 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A reflection mode photomask, comprising:
a reflective multilayer over a substrate; and
a plurality of absorber stacks over the reflective multilayer, wherein each absorber stack of the plurality of absorber stacks comprises:
an absorber layer, wherein a material of the absorber layer is selected from the group consisting of tantalum oxynitride and tantalum silicon oxynitride, and
an anti-reflective coating (ARC) layer on the absorber layer, wherein a material of the ARC layer is selected from the group consisting of tantalum nitride and tantalum silicon.