US 12,176,206 B2
Varying temperature anneal for film and structures formed thereby
Shu Ling Liao, Taichung (TW); Chung-Chi Ko, Nantou (TW); and Wan-Yi Kao, Baoshan Township (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed on Jun. 9, 2023, as Appl. No. 18/332,056.
Application 18/332,056 is a division of application No. 17/591,176, filed on Feb. 2, 2022, granted, now 11,715,637.
Application 16/587,239 is a division of application No. 16/100,288, filed on Aug. 10, 2018, granted, now 10,748,760, issued on Aug. 18, 2020.
Application 17/591,176 is a continuation of application No. 16/587,239, filed on Sep. 30, 2019, granted, now 11,244,823, issued on Feb. 8, 2022.
Claims priority of provisional application 62/592,973, filed on Nov. 30, 2017.
Prior Publication US 2023/0317448 A1, Oct. 5, 2023
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 29/66 (2006.01); H01L 21/02 (2006.01); H01L 21/8234 (2006.01); H01L 29/78 (2006.01); H01L 27/088 (2006.01)
CPC H01L 21/0228 (2013.01) [H01L 21/02126 (2013.01); H01L 21/0214 (2013.01); H01L 21/02211 (2013.01); H01L 21/02332 (2013.01); H01L 21/02337 (2013.01); H01L 21/0234 (2013.01); H01L 21/823468 (2013.01); H01L 29/6656 (2013.01); H01L 29/66795 (2013.01); H01L 29/785 (2013.01); H01L 21/823431 (2013.01); H01L 27/0886 (2013.01)] 20 Claims
OG exemplary drawing
 
15. A semiconductor structure comprising:
a gate structure over a semiconductor substrate; and
a first gate spacer along a sidewall of the gate structure, wherein an oxygen concentration in the first gate spacer increases from a first sidewall of the first gate spacer closest to the gate structure to a first position within the first gate spacer, and wherein the oxygen concentration in the first gate spacer decreases from the first position within the first gate spacer to a second sidewall of the first gate spacer distal to the gate structure.