US 12,176,203 B2
Methods and apparatuses for forming semiconductor devices containing tungsten layers using a tungsten growth suppressant
Fei Zhou, San Jose, CA (US); Rahul Sharangpani, Fremont, CA (US); Raghuveer S. Makala, Campbell, CA (US); Yujin Terasawa, Yokkaichi (JP); Naoki Takeguchi, Nagoya (JP); Kensuke Yamaguchi, Yokkaichi (JP); and Masaaki Higashitani, Cupertino, CA (US)
Assigned to SANDISK TECHNOLOGIES LLC, Addison, TX (US)
Filed by SANDISK TECHNOLOGIES LLC, Addison, TX (US)
Filed on Jan. 11, 2022, as Appl. No. 17/573,452.
Prior Publication US 2023/0223248 A1, Jul. 13, 2023
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 21/02 (2006.01); C23C 16/458 (2006.01)
CPC H01L 21/02175 (2013.01) [C23C 16/4583 (2013.01); H01L 21/02271 (2013.01)] 4 Claims
OG exemplary drawing
 
1. A method of depositing a metal, comprising:
providing a structure a process chamber; and
providing a metal fluoride gas and two different growth-suppressant gases into the process chamber to deposit the metal over the structure;
wherein:
the metal comprises tungsten;
the metal fluoride gas comprises tungsten hexafluoride;
a first growth-suppressant gas comprises a nitrogen containing gas;
a second growth-suppressant gas comprises gas containing a halogen other than fluorine;
the method comprises an atomic layer deposition process comprising a plurality of unit process cycles, and each unit process cycle comprises a tungsten deposition step, a tungsten hexafluoride purge step, a reducing step and a reducing gas purging step; and
during the tungsten deposition step, initiation of flow the second growth-suppressant gas into the process chamber occurs during a flow of the metal fluoride gas into the process chamber and after the initiation of flow of the metal fluoride gas into the process chamber.