US 12,176,193 B2
System and method for residual gas analysis
Yen-Liang Chen, Hsinchu (TW)
Assigned to Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed on Jul. 28, 2023, as Appl. No. 18/361,767.
Application 18/361,767 is a continuation of application No. 16/942,577, filed on Jul. 29, 2020, granted, now 11,791,141.
Prior Publication US 2023/0386807 A1, Nov. 30, 2023
This patent is subject to a terminal disclaimer.
Int. Cl. H01J 37/34 (2006.01); B08B 5/00 (2006.01); B08B 13/00 (2006.01); H01J 37/32 (2006.01)
CPC H01J 37/3476 (2013.01) [B08B 5/00 (2013.01); B08B 13/00 (2013.01); H01J 37/32862 (2013.01); H01J 37/32981 (2013.01); B08B 2205/00 (2013.01); H01J 2237/0225 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method for detecting a processing chamber condition, comprising:
performing an etch processing step on a substrate wafer in the processing chamber in the presence of a first precursor gas;
performing a wafer-less processing step in the processing chamber wherein the wafer-less processing step includes:
introducing a second precursor gas into the processing chamber;
reacting the second precursor gas with a residual compound accumulated on a wall of the processing chamber, the residual compound accumulated on the wall of the processing chamber containing silicon and oxygen; and
producing a residual gas through the reaction of the second precursor gas with the residual compound accumulated on the wall of the processing chamber;
receiving the residual gas at an ion analyzer;
analyzing, by the ion analyzer, the residual gas for ion species;
identifying ion species in the residual gas;
measuring concentration of ion species in the residual gas;
determining a condition of the processing chamber based on the identifying and the measuring;
responsive to the determining, introducing a cleaning gas containing one or more of CFx, C4F8, CO, CHxFy, C5F8 and C3F6 gas into the processing chamber; and
reacting the cleaning gas with the residual compound accumulated on the wall of the processing chamber.