US 12,176,192 B2
System and method for particle control in MRAM processing
Tsung-Han Kuo, New Taipei (TW); Po-Shu Wang, Hsinchu County (TW); and Wei-Ming Wang, Hsinchu County (TW)
Assigned to Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu (TW)
Filed by Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu (TW)
Filed on Aug. 8, 2023, as Appl. No. 18/231,740.
Application 18/231,740 is a continuation of application No. 17/363,621, filed on Jun. 30, 2021, granted, now 11,776,796.
Application 17/363,621 is a continuation of application No. 16/530,392, filed on Aug. 2, 2019, granted, now 11,056,324.
Claims priority of provisional application 62/718,050, filed on Aug. 13, 2018.
Prior Publication US 2023/0386806 A1, Nov. 30, 2023
This patent is subject to a terminal disclaimer.
Int. Cl. H01J 37/34 (2006.01); C23C 14/35 (2006.01); H01J 37/32 (2006.01); H10N 50/01 (2023.01)
CPC H01J 37/3458 (2013.01) [C23C 14/35 (2013.01); H01J 37/32541 (2013.01); H01J 37/3255 (2013.01); H01J 37/3405 (2013.01); H10N 50/01 (2023.02); H01J 2237/332 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A film deposition system comprising:
a processing chamber sealable to create a pressurized environment and configured to contain a plasma, a target and a substrate in the pressurized environment; and
a particle control unit, wherein the particle control unit is configured to provide an external force to each of at least one charged atom and at least one contamination particle in the plasma,
wherein the particle control unit comprises at least one pair of electromagnetic coils, and
wherein the at least one pair of conductive electromagnetic coils is configured to provide an magnetic field between a first electromagnet and a second electromagnet in the particle control unit.