US 12,176,132 B2
Highly textured 001 BiSb and materials for making same
Quang Le, San Jose, CA (US); Brian R. York, San Jose, CA (US); Cherngye Hwang, San Jose, CA (US); Xiaoyong Liu, San Jose, CA (US); Michael A. Gribelyuk, San Jose, CA (US); Xiaoyu Xu, San Jose, CA (US); Randy G. Simmons, San Jose, CA (US); Kuok San Ho, Emerald Hills, CA (US); and Hisashi Takano, San Jose, CA (US)
Assigned to Western Digital Technologies, Inc., San Jose, CA (US)
Filed by Western Digital Technologies, Inc., San Jose, CA (US)
Filed on Jun. 30, 2022, as Appl. No. 17/855,045.
Prior Publication US 2024/0006109 A1, Jan. 4, 2024
This patent is subject to a terminal disclaimer.
Int. Cl. H01F 10/32 (2006.01); C23C 8/12 (2006.01); C30B 29/52 (2006.01); G11B 5/00 (2006.01); G11B 5/39 (2006.01); H10B 61/00 (2023.01); H10N 50/85 (2023.01); H10N 52/00 (2023.01); H10N 52/01 (2023.01); H10N 52/80 (2023.01)
CPC H01F 10/324 (2013.01) [C23C 8/12 (2013.01); C30B 29/52 (2013.01); G11B 5/3909 (2013.01); H10B 61/00 (2023.02); H10N 50/85 (2023.02); H10N 52/00 (2023.02); H10N 52/01 (2023.02); H10N 52/80 (2023.02); G11B 2005/0021 (2013.01); G11B 2005/0024 (2013.01)] 24 Claims
OG exemplary drawing
 
19. A spin-orbit torque (SOT) device, comprising:
a substrate;
an amorphous material oxide layer disposed over the substrate;
a spin Hall effect layer disposed in contact with the amorphous material oxide layer, the spin Hall effect layer comprising BiSb having a (001) orientation; and
a free layer disposed over the spin Hall effect layer.