US 12,174,551 B2
Pattern measurement device and pattern measurement method
Takuma Yamamoto, Tokyo (JP); Hiroya Ohta, Tokyo (JP); Kenji Tanimoto, Tokyo (JP); Yusuke Abe, Tokyo (JP); Tomohiro Tamori, Tokyo (JP); and Masaaki Nojiri, Tokyo (JP)
Assigned to Hitachi High-Technologies Corporation, Tokyo (JP)
Filed by Hitachi High-Tech Corporation, Tokyo (JP)
Filed on Apr. 29, 2022, as Appl. No. 17/732,969.
Application 17/732,969 is a continuation of application No. 16/645,885, granted, now 11,353,798, previously published as PCT/JP2017/037172, filed on Oct. 13, 2017.
Prior Publication US 2022/0260930 A1, Aug. 18, 2022
Int. Cl. G03F 7/00 (2006.01); G01B 15/04 (2006.01); G01N 23/225 (2018.01); G03F 7/20 (2006.01)
CPC G03F 7/70625 (2013.01) [G01B 15/04 (2013.01); G01N 23/225 (2013.01); G03F 7/2059 (2013.01); H01J 2237/2815 (2013.01); H01J 2237/2817 (2013.01)] 31 Claims
OG exemplary drawing
 
1. A pattern measurement device comprising: a calculation device that calculates a positional deviation amount between upper and lower parts of a pattern formed on a sample based on image data obtained by irradiating the sample with a charged particle beam at a predetermined beam incident angle, and compares or references the calculated positional deviation amount with a model acquired in advance between a positional deviation amount and an inclination amount of the pattern;
wherein when a relative angle between the charged particle beam and a perpendicular of a sample surface, a relative angle between the charged particle beam and an ideal optical axis of an electron optical system, or a relative angle between the charged particle beam and a perpendicular in a moving direction of the sample is defined as the beam incident angle, the beam incident angle is zero degrees.