US 12,174,545 B2
System and method for performing extreme ultraviolet photolithography processes
Tai-Yu Chen, Hsinchu (TW); Sagar Deepak Khivsara, Hsinchu (TW); Kuo-An Liu, Hsinchu (TW); Chieh Hsieh, Hsinchu (TW); Shang-Chieh Chien, Hsinchu (TW); Gwan-Sin Chang, Hsinchu (TW); Kai Tak Lam, Hsinchu (TW); Li-Jui Chen, Hsinchu (TW); Heng-Hsin Liu, Hsinchu (TW); Chung-Wei Wu, Hsinchu (TW); and Zhiqiang Wu, Hsinchu (TW)
Assigned to Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed on Jul. 28, 2023, as Appl. No. 18/361,254.
Application 18/361,254 is a continuation of application No. 17/867,318, filed on Jul. 18, 2022, granted, now 11,768,437.
Application 17/867,318 is a continuation of application No. 17/193,827, filed on Mar. 5, 2021, granted, now 11,392,040, issued on Jul. 19, 2022.
Claims priority of provisional application 63/021,478, filed on May 7, 2020.
Prior Publication US 2023/0367225 A1, Nov. 16, 2023
This patent is subject to a terminal disclaimer.
Int. Cl. G03F 7/00 (2006.01)
CPC G03F 7/70033 (2013.01) [G03F 7/70166 (2013.01); G03F 7/705 (2013.01); G03F 7/70916 (2013.01); G03F 7/70933 (2013.01)] 20 Claims
OG exemplary drawing
 
10. A system, comprising:
an extreme ultraviolet radiation generation chamber including an interior surface;
a fluid distributor including a first fluid chamber and second fluid chamber separated from each other by a partition and each having a respective outlet into the extreme ultraviolet radiation generation chamber; and
a director vane coupled to the partition and configured to selectively adjust the flow of the buffer fluid into the extreme ultraviolet radiation chamber from the outlets.