US 12,174,540 B2
Method of manufacturing a semiconductor device
An-Ren Zi, Hsinchu (TW); and Ching-Yu Chang, Yuansun Village (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed by TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed on Sep. 22, 2021, as Appl. No. 17/482,112.
Claims priority of provisional application 63/159,333, filed on Mar. 10, 2021.
Prior Publication US 2022/0291587 A1, Sep. 15, 2022
Int. Cl. G03F 7/09 (2006.01); G03F 7/004 (2006.01); G03F 7/105 (2006.01); G03F 7/11 (2006.01); H01L 21/027 (2006.01); H01L 21/308 (2006.01)
CPC G03F 7/094 (2013.01) [G03F 7/0045 (2013.01); G03F 7/105 (2013.01); G03F 7/11 (2013.01); H01L 21/0276 (2013.01); H01L 21/3086 (2013.01); H01L 21/3081 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method for manufacturing a semiconductor device, comprising:
forming a resist structure including forming a resist layer comprising a resist composition over a substrate;
selectively exposing the resist layer to actinic radiation;
after selectively exposing the resist layer to actinic radiation, treating the resist layer with an additive,
wherein the treating the resist layer with an additive further comprises forming a top layer comprising a top layer composition over an entire upper surface of the selectively exposed resist layer,
wherein the top layer composition comprises the additive, and
wherein the additive is one or more selected from the group consisting of a radical inhibitor, a thermal radical initiator, and a photo radical initiator; and
after treating the resist layer with the additive, developing the resist layer.