US 12,174,536 B2
Resist composition and pattern forming process
Masaki Ohashi, Joetsu (JP); and Ryosuke Taniguchi, Joetsu (JP)
Assigned to Shin-Etsu Chemical Co., Ltd., Tokyo (JP)
Filed by Shin-Etsu Chemical Co., Ltd., Tokyo (JP)
Filed on Nov. 11, 2021, as Appl. No. 17/524,085.
Claims priority of application No. 2020-192128 (JP), filed on Nov. 19, 2020.
Prior Publication US 2022/0155687 A1, May 19, 2022
This patent is subject to a terminal disclaimer.
Int. Cl. G03F 7/004 (2006.01); G03F 7/039 (2006.01); G03F 7/20 (2006.01); G03F 7/30 (2006.01); G03F 7/32 (2006.01); G03F 7/40 (2006.01)
CPC G03F 7/0042 (2013.01) [G03F 7/0045 (2013.01); G03F 7/0392 (2013.01); G03F 7/0397 (2013.01); G03F 7/2004 (2013.01); G03F 7/30 (2013.01); G03F 7/322 (2013.01); G03F 7/40 (2013.01)] 8 Claims
 
1. A resist composition comprising (A) a compound having the formula (1), (B) an organic solvent, and (C) a base polymer comprising repeat units having an acid labile group,

OG Complex Work Unit Chemistry
wherein R1 to R4 are each independently a C1-C20 hydrocarbyl group which may contain a heteroatom, R1 and R2 may bond together to form a ring with L1 and M to which they are attached, each pair of R1 and R2, and R3 and R4 may bond together to form a spiro ring containing M as the spiro atom,
L1 and L2 are each independently —O— or —N(R)—, R is hydrogen or a C1-C20 hydrocarbyl group which may contain a heteroatom, and
M is sulfur or selenium.