US 12,174,527 B2
Pellicle for an EUV lithography mask and a method of manufacturing thereof
Yun-Yue Lin, Hsinchu (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed by TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed on Jul. 25, 2023, as Appl. No. 18/226,155.
Application 18/226,155 is a division of application No. 17/328,646, filed on May 24, 2021, granted, now 11,782,339.
Application 17/328,646 is a continuation of application No. 16/427,980, filed on May 31, 2019, granted, now 11,016,383, issued on May 25, 2021.
Claims priority of provisional application 62/725,984, filed on Aug. 31, 2018.
Prior Publication US 2023/0367203 A1, Nov. 16, 2023
This patent is subject to a terminal disclaimer.
Int. Cl. G03F 1/62 (2012.01); G03F 1/22 (2012.01); G03F 1/80 (2012.01)
CPC G03F 1/62 (2013.01) [G03F 1/22 (2013.01); G03F 1/80 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A pellicle for an EUV photo mask, comprising:
a first capping layer;
a first matrix layer disposed over the first capping layer;
a second matrix layer disposed over the first matrix layer;
a stable layer disposed over the second matrix layer;
a second capping layer disposed over the stable layer; and
a metallic layer disposed over the stable layer.