US 12,174,526 B2
Pellicle for an EUV lithography mask and a method of manufacturing thereof
Tzu-Ang Chao, Hsinchu (TW); Chao-Ching Cheng, Hsinchu (TW); Han Wang, Hsinchu (TW); Ming-Yang Li, Hsinchu (TW); and Gregory Michael Pitner, Sunnyvale, CA (US)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed by TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed on Jan. 14, 2022, as Appl. No. 17/576,912.
Claims priority of provisional application 63/230,576, filed on Aug. 6, 2021.
Prior Publication US 2023/0044415 A1, Feb. 9, 2023
Int. Cl. G03F 1/62 (2012.01); G03F 1/64 (2012.01)
CPC G03F 1/62 (2013.01) [G03F 1/64 (2013.01)] 20 Claims
 
1. A pellicle for an extreme ultraviolet (EUV) reflective mask, comprising:
a first layer;
a second layer; and
a main membrane disposed between the first layer and second layer, wherein:
the main membrane includes a plurality of co-axial nanotubes, each of which includes an inner tube and one or more outer tubes surrounding the inner tube, and
two of the inner tube and one or more outer tubes are made of different materials from each other.