US 12,174,477 B2
Touch display panel with touch electrode multiplexed as common electrode
Bao Zha, Shenzhen (CN)
Assigned to TCL China Star Optoelectronics Technology Co., Ltd., Shenzhen (CN)
Appl. No. 17/610,495
Filed by TCL China Star Optoelectronics Technology Co., Ltd., Shenzhen (CN)
PCT Filed Sep. 17, 2021, PCT No. PCT/CN2021/118920
§ 371(c)(1), (2) Date Nov. 11, 2021,
PCT Pub. No. WO2023/039814, PCT Pub. Date Mar. 23, 2023.
Claims priority of application No. 202111073771.X (CN), filed on Sep. 14, 2021.
Prior Publication US 2024/0248340 A1, Jul. 25, 2024
Int. Cl. G02F 1/1333 (2006.01); G02F 1/1343 (2006.01); G02F 1/1368 (2006.01); G06F 3/041 (2006.01); G06F 3/044 (2006.01)
CPC G02F 1/13338 (2013.01) [G02F 1/134309 (2013.01); G02F 1/1368 (2013.01); G06F 3/0412 (2013.01); G06F 3/04164 (2019.05); G06F 3/0443 (2019.05); G06F 3/0418 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A touch display panel, comprising:
a first substrate located on a light-exiting side of the touch display panel;
a second substrate disposed opposite to the first substrate, and located on a light-entering side of the touch display panel; and
a liquid crystal disposed between the first substrate and the second substrate;
wherein the first substrate comprises a first underlayer, a touch structure layer, a thin film transistor layer, and a pixel electrode layer; the touch structure layer and the thin film transistor layer are disposed on a side of the first underlayer close to the liquid crystal, the pixel electrode layer is disposed on a side of the thin film transistor layer and the touch structure layer close to the liquid crystal;
the touch structure layer comprises a touch electrode and a touch trace; the touch trace is disposed in a different layer from the touch electrode, the touch trace is connected to the touch electrode, the touch electrode is multiplexed as a common electrode; and
the touch display panel further comprises a display touch chip connected to the touch trace;
wherein the touch structure layer is prepared in the thin film transistor layer;
wherein the thin film transistor layer comprises a first metal layer, a first insulating layer, an active layer, a second metal layer, and a second insulating layer; the first insulating layer is disposed on the first metal layer, the active layer is disposed on the first insulating layer, the second metal layer is disposed on the first insulating layer, the second insulating layer covers the active layer and the second metal layer; the pixel electrode layer is disposed on the second insulating layer; and
the first metal layer comprises a gate electrode and a touch electrode, the second metal layer comprises a source electrode, a drain electrode, and a touch trace; the source electrode and the drain electrode are connected to the active layer, and the touch trace is disposed on the first insulating layer and spaced from the active layer.