US 12,174,415 B2
Semiconductor package and manufacturing method thereof
Chih-Chieh Chang, Hsinchu (TW); Chung-Hao Tsai, Changhua County (TW); Chen-Hua Yu, Hsinchu (TW); and Chuei-Tang Wang, Taichung (TW)
Assigned to Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed on Aug. 9, 2022, as Appl. No. 17/883,642.
Application 17/883,642 is a continuation of application No. 17/214,920, filed on Mar. 28, 2021, granted, now 11,460,633.
Application 17/214,920 is a continuation of application No. 16/569,673, filed on Sep. 13, 2019, granted, now 10,962,711, issued on Mar. 30, 2021.
Claims priority of provisional application 62/773,158, filed on Nov. 29, 2018.
Prior Publication US 2022/0381978 A1, Dec. 1, 2022
Int. Cl. G02B 6/12 (2006.01); G02B 6/13 (2006.01)
CPC G02B 6/12004 (2013.01) [G02B 6/12 (2013.01); G02B 6/13 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor package, comprising:
a photonic die having optical devices, and comprising:
a semiconductor wave guide pattern, laterally extending along a front surface of a substrate, and disposed within a peripheral region of the photonic die, wherein a narrow end of the semiconductor wave guide pattern is closer to an edge of the photonic die than a wide end of the semiconductor wave guide pattern; and
a dielectric layer, covering the substrate, and having a recess extending to the narrow end of the semiconductor wave guide pattern from a top surface of the dielectric layer;
an encapsulant, laterally encapsulating the photonic die; and
a wave guide structure, lying on the encapsulant and the dielectric layer of the photonic die, and extending into the recess of the dielectric layer, to be optically coupled to the narrow end of the semiconductor wave guide pattern.