US 12,174,266 B2
Leakage current detection circuit for semiconductor
Junichi Hasegawa, Nisshin (JP); and Akimasa Niwa, Nisshin (JP)
Assigned to DENSO CORPORATION, Kariya (JP); TOYOTA JIDOSHA KABUSHIKI KAISHA, Toyota (JP); and MIRISE Technologies Corporation, Nisshin (JP)
Filed by DENSO CORPORATION, Kariya (JP); TOYOTA JIDOSHA KABUSHIKI KAISHA, Toyota (JP); and MIRISE Technologies Corporation, Nisshin (JP)
Filed on Apr. 29, 2022, as Appl. No. 17/732,819.
Claims priority of application No. 2021-078530 (JP), filed on May 6, 2021; and application No. 2022-006415 (JP), filed on Jan. 19, 2022.
Prior Publication US 2022/0357410 A1, Nov. 10, 2022
Int. Cl. G01R 31/52 (2020.01); H03K 17/082 (2006.01)
CPC G01R 31/52 (2020.01) [H03K 17/0822 (2013.01); H03K 2217/0063 (2013.01); H03K 2217/0072 (2013.01)] 23 Claims
OG exemplary drawing
 
1. A leakage current detection circuit for detecting a leakage current in a semiconductor element, the leakage current detection circuit comprising:
a setting circuit; and
a detector,
wherein the semiconductor element includes
a first terminal at a high-potential-side of the semiconductor element,
a second terminal at a low-potential-side of the semiconductor element, and
a control terminal configured to receive a signal for controlling a conduction state between the first terminal and the second terminal, and further configured to be insulated from the first terminal and the second terminal,
wherein the setting circuit is configured to set a duration during which a charging current flows to the control terminal for an undetectable duration, in response to turning on the semiconductor element, and
wherein the detector is configured to output a detected signal based on a condition that the leakage current flows from the control terminal to the second terminal after the undetectable duration has elapsed.